ECH8309
mm
Outline Drawing
ECH8309-TL-H
Mass (g) Unit
0.02
* For reference
Land Pattern Example
0.65
0.4
Unit: mm
No. A1418-6/7
相关PDF资料
ECH8310-TL-H MOSFET P-CH 30V 9A ECH8
ECH8315-TL-H MOSFET P-CH 30V 7.5A ECH8
ECH8410-TL-H MOSFET N-CH 30V 12A ECH8
ECH8419-TL-H MOSFET N-CH 35V 9A ECH8
ECH8420-TL-H MOSFET N-CH 20V 14A ECH8
ECH8601M-TL-H MOSFET N-CH 24V 8A ECH8
ECH8602M-TL-H MOSFET N-CH 30V 6A ECH8
ECH8649-TL-H MOSFET N-CH DUAL 20V 7.5A ECH8
相关代理商/技术参数
ECH8310 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8310_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8310-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8315 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8315-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8320 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8320_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8320-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube